savantic semiconductor product specification silicon npn power transistors 2SC1755 description with to-220 package high breakdown voltage applications for tv chroma,video ,audio output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 0.2 a i cm collector current-peak 0.7 a t a =25 1.2 p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -40~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC1755 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 300 v v cesat collector-emitter saturation voltage i c =50ma ;i b =5ma 2.0 v i cbo collector cut-off current v cb =200v ;i e =0 0.1 a i ebo emitter cut-off current v eb =5v; i c =0 0.1 a h fe dc current gain i c =10ma ; v ce =10v 40 200 f t transition frequency i c =10ma ; v ce =30v 50 mhz c ob collector output capacitance f=1mhz;v cb =50v 5.3 pf h fe classifications c d e 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon npn power transistors 2SC1755 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC1755
|
